1 CMPA2560025D 25 w, 2.5 - 6.0 ghz, gan mmic, power amplifer crees cmp2560025d is a gallium nitride (gan) high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths compared to si and gaas transistors. this mmic contains a two-stage reactively matched amplifer design approach enabling very wide bandwidths to be achieved. rev 1.3 C sept ember 2012 pn: CMPA2560025D typical performance over 2.5-6.0 ghz (t c = 25?c) parameter 2.5 ghz 4.0 ghz 6.0 ghz units gain 27.5 24.3 23.1 db saturated output power, p sat 1 35.8 37.5 25.6 w power gain @ p out = 43 dbm 23.1 20.9 16.3 db pae @ p out 43 dbm 31.5 32.8 30.7 % note 1 : p sat is defned as the rf output power where the device starts to draw positive gate current in the range of 7-13 ma. features ? 24 db small signal gain ? 25 w typical p sat ? operation up to 28 v ? high breakdown voltage ? high temperature operation ? size 0.180 x 0.145 x 0.004 inches applications ? ultra broadband amplifers ? fiber drivers ? test instrumentation ? emc amplifer drivers subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c parameter symbol rating units drain-source voltage v dss 84 vdc gate-source voltage v gs -10, +2 vdc storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c thermal resistance, junction to case (packaged) 1 r jc 2.5 ?c/w mounting temperature (30 seconds) t s 320 ?c note 1 eutectic die attach using 80/20 ausn solder mounted to a 40 mil thick cuw carrier. electrical characteristics (frequency = 2.5 ghz to 6.0 ghz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics gate threshold voltage v (gs)th -3.8 -3.0 -2.3 v v ds = 10 v, i d = 20 ma gate quiescent voltage v (gs)q C -2.7 C vdc v dd = 26 v, i dq = 1200 ma saturated drain current i ds 8.0 9.7 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v bd 84 100 C v v gs = -8 v, i d = 20 ma on resistance r on C 0.35 C ? v ds = 0.1 v gate forward voltage v g-on C 1.9 C v i gs = 3.6 ma rf characteristics small signal gain s21 21 25 C db v dd = 26 v, i dq = 1200 ma power output at 2.5 ghz p out1 30 C C w v dd = 26 v, i dq = 1200 ma, p in 26 dbm power output at 3.0 ghz p out2 20 25 C w v dd = 26 v, i dq = 1200 ma, p in 26 dbm power output at 4.0 ghz p out3 20 30 C w v dd = 26 v, i dq = 1200 ma, p in 26 dbm power added effciency pae C 35 C % v dd = 26 v, i dq = 1200 ma power gain g p C 20 C db v dd = 26 v, i dq = 1200 ma input return loss s11 C 6 C db v dd = 26 v, i dq = 1200 ma output return loss s22 C 5 C db v dd = 26 v, i dq = 1200 ma output mismatch stress vswr C C 5:1 y no damage at all phase angles, v dd = 26 v, i dq = 1200 ma, p out = 25w cw CMPA2560025D rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2008-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
3 die dimensions (units in microns) overall die size 3680 x 4560 (+0/-50) microns, die thickness 100 (+/-10) microns. all gate and drain pads must be wire bonded for electrical connection. pad number function description pad size (microns) note 1 rf-in rf-input pad. matched to 50 ohm. requires gate control from an external bias Ct from -1.5 v to -2.5 v and external blocking capacitor. 202 x 204 3 2 vg1_a gate control for stage 1. v g -1.5 - 2.5 v. 138 x 147 1,2 3 vg1_b gate control for stage 1. v g -1.5 - 2.5 v. 138 x 147 1,2 4 vd1_a drain supply for stage 1. v d = 26 v. 167 x 225 1 5 vd1_b drain supply for stage 1. v d = 26 v. 167 x 225 1 6 vg2_a gate control for stage 2a. v g -1.5 - 2.5 v. 167 x 175 1 7 vg2_b gate control for stage 2b. v g -1.5 - 2.5 v. 167 x 175 1 8 vd2_a drain supply for stage 2a. v d = 26 v. a 1 9 vd2_b drain supply for stage 2b. v d = 26 v. a 1 10 rf-out this pad is dc blocked internally. the dc impedance ~ 0 ohm due output matching circuit. requires external matching circuit for optimal performance for f >4.0 ghz. 252 x 204 3 notes: 1 attach bypass capacitor to port 2-9 per application circuit. 2 vg1_a and vg1_b is connected internally so it would be enough to connect either one for proper operation. 3 the rf input and output pad have a ground-signal-ground with a pitch of 10 mil (250 um). die assembly notes: ? recommended solder is ausn (80/20) solder. refer to crees website for the eutectic die bond procedure application note at http://www.cree.com/products/wireless_appnotes.asp ? vacuum collet is the preferred method of pick-up. ? the backside of the die is the source (ground) contact. ? die back side gold plating is 5 microns thick minimum. ? thermosonic ball or wedge bonding are the preferred connection methods. ? gold wire must be used for connections. ? use the die label (xx-yy) for correct orientation. CMPA2560025D rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2008-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
4 block diagram showing additional capacitors & output matching section for operation over 2.5 to 6.0 ghz designator description quantity c1,c2,c3,c4,c5,c6,c7,c8 cap, 120pf, +/-10%, single layer, 0.030, er 3300, 100v, ni/au termination 8 c9,c10,c11,c12 cap, 680pf, +/-10%, single layer, 0.070, er 3300, 100v, ni/au termination 4 notes: 1 an additional microstripline of 31 ohm impedance and electrical length of 72 at 6.0 ghz at the output of the mmic is required to optimize overall performance in the 2.5 to 6.0 ghz frequency band. 2 the input, output and decoupling capacitors should be attached as close as possible to the die- typical distance is 5 to 10 mils with a maximum of 15 mils. 3 the mmic die and capacitors should be connected with 2 mil gold bond wires. CMPA2560025D rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2008-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
5 typical performance of the CMPA2560025D as measured in cmpa2560025f-tb small signal gain vs frequency input & output return losses vs frequency power gain vs frequency gain vs output power as a function of frequency 10 12 14 16 18 20 22 24 26 28 30 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) gain (db) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) gain (db) s11 typical s22 typical 10 12 14 16 18 20 22 24 26 28 30 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) power gain (db) output power = 44 dbm output power = 43 dbm 10 12 14 16 18 20 22 24 26 28 30 18 22 26 30 34 38 42 46 output power (dbm) gain (db) 2.5 ghz 4.0 ghz 6.0 ghz CMPA2560025D rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2008-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
6 typical performance of the CMPA2560025D as measured in cmpa2560025f-tb saturated output power performance (p sat ) vs frequency frequency (ghz) p sat (dbm) p sat (w) 2.5 45.54 35.8 3.0 44.43 27.7 3.5 45.52 35.7 4.0 45.74 37.5 4.5 44.82 30.4 5.0 45.08 32.2 5.5 45.07 32.1 6.0 44.08 25.6 note: p sat is defned as the rf output power where the device starts to draw positive gate current in the range of 7-13 ma. power added effciency vs output power pae at 43 dbm and 44 dbm output as a function of frequency power vs frequency 40 41 42 43 44 45 46 47 48 49 50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) saturated output power, p sat (dbm) typical psat (dbm) 0% 5% 10% 15% 20% 25% 30% 35% 40% 45% 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) power added efficiency, pae (%) pae 44 dbm pae 43 dbm 0% 5% 10% 15% 20% 25% 30% 35% 40% 45% 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 output power, p out (dbm) power added efficiency, pae (%) 2.5 ghz 4.0 ghz 6.0 ghz CMPA2560025D rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2008-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
7 typical performance of the CMPA2560025D as measured in cmpa2560025f-tb 2 nd harmonic vs output power im3 vs total average power as a function of frequency as a function of frequency gain at p out of 40 dbm at 25c & 75c vs frequency note: the temperature coeffcient is -0.05 db/c 0 5 10 15 20 25 30 2.5 2.8 3.1 3.4 3.7 4.0 frequency (ghz) gain (db) ambient (25c) hot (75c) -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 22 24 26 28 30 32 34 36 38 40 42 44 total average output power (dbm) im3 (dbc) 2.5 ghz 4.0 ghz 6.0 ghz -70 -60 -50 -40 -30 -20 -10 0 22 24 26 28 30 32 34 36 38 40 42 44 46 output power, p out (dbm) 2 nd harmonic (dbc) 2.5 ghz 4.0 ghz 6.0 ghz CMPA2560025D rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2008-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
8 source and load impedances frequency (mhz) z source z load 2500 50 + j0 36.2 - j15.4 3000 50 + j0 32.7 C j15.4 3500 50 + j0 29.6 - j14.7 4000 50 + j0 27.0 - j13.8 4500 50 + j0 24.8 - j12.1 5000 50 + j0 23.0 - j10.4 5500 50 + j0 21.6 - j8.6 6000 50 + j0 20.6 - j6.7 note 1. v dd = 26v, i dq = 1200ma in the 780019 package. note 2. optimized for p sat note 3: the quoted impedances are those presented to the die by the cmpa2560025f-tb demonstration amplifer, fully de-embedded to the die bond pad reference plane. electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm ii (200 < 500 v) jedec jesd22 c101-c d z source z load g s CMPA2560025D rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2008-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
9 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/wireless sarah miller marketing & export cree, rf components 1.919.407.5302 ryan baker marketing cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 CMPA2560025D rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2008-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
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